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| SBM540 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features NEW PRODUCT * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 1 A P 3 E G POWERMITEa3 Dim A B C D E G Min 4.03 6.40 Max 4.09 6.61 B 2 J H .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM Mechanical Data * * * * * * * Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Marking: Type Number, See also Sheet 3 Weight: 0.072 grams (approx.) Ordering Information, See Sheet 3 M D C PIN 1 PIN 2 H K C L PIN 3, BOTTOMSIDE HEAT SINK J K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (see also Figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 90C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM Min 40 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.48 0.45 0.59 0.56 0.05 2.5 250 Max 3/4 0.52 3/4 3/4 3/4 0.5 20 3/4 Unit V V Test Condition IR = 0.5mA IF = 5A, TS = 25C IF = 5A, TS = 125C IF = 10A, TS = 25C IF = 10A, TS = 125C TS = 25C, VR = 40V TS = 100C, VR = 40V f = 1.0MHz, VR = 4.0V DC Value 40 28 5 100 3.2 -55 to +125 -55 to +150 Unit V V A A C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Reverse Current (Note 1) Total Capacitance Notes: IRM CT mA pF 1. Short duration test pulse used to minimize self-heating effect. DS30297 Rev. 3 - 2 1 of 3 www.diodes.com SBM540 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 NEW PRODUCT 10 TJ = 125C 10 TJ = 100C 1.0 TJ = 100C 1.0 TJ = 25C TJ = 75C 0.1 0.1 0.01 TJ = 25C 0.01 0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 0.001 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 125 Single Half-Sine-Wave (JEDEC Method) 1000 CT, TOTAL CAPACITANCE (pF) Tj = 25C f = 1MHz 100 TC = 90C 75 100 50 25 0 1 10 100 10 0.1 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance vs. Reverse Voltage DS30297 Rev. 3 - 2 2 of 3 www.diodes.com SBM540 7.5 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 8 7 9 10 3 4 6 1 2 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 3 Tj = 125C 2 NEW PRODUCT IF, DC FORWARD CURRENT (A) 6.0 Note 1 4.5 Note 2 3.0 dc 1.5 Note 3 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating Notes: 1. TA = TSOLDERING POINT, RqJS = 3.2C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 15-30C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75C/W. Ordering Information Device SBM540-13 Notes: (Note 4) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM540 YYWW(K) SBM540 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator POWERMITE is a registered trademark of Microsemi Corporation. DS30297 Rev. 3 - 2 3 of 3 www.diodes.com SBM540 |
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